Resonant intrinsic spin hall effect in p-type GaAs quantum well structure.
نویسندگان
چکیده
We study intrinsic spin Hall effect in p-type GaAs quantum well structure described by Luttinger Hamiltonian and a Rashba spin-orbit coupling arising from the structural inversion symmetry breaking. The Rashba term induces an energy level crossing in the lowest heavy hole subband, which gives rise to a resonant spin Hall conductance. The resonance may be used to identify the intrinsic spin Hall effect in experiments.
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ورودعنوان ژورنال:
- Physical review letters
دوره 96 8 شماره
صفحات -
تاریخ انتشار 2006